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K1959-T1 Просмотр технического описания (PDF) - NEC => Renesas Technology

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K1959-T1 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING NEC
NEC => Renesas Technology NEC
K1959-T1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1959
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1959 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
• Gate can be driven by 1.5 V
• Low ON resistance
RDS(on) = 3.2 MAX. @ VGS = 1.5 V, ID = 50 mA
RDS(on) = 0.5 MAX. @ VGS = 4.0 V, ID = 1.0 A
PACKAGE DIMENSIONS (in mm)
4.5 ±0.1
1.6 ±0.2
1.5 ±0.1
D
S
G
0.42 ±0.06
1.5 0.47
±0.06
3.0
0.42 ±0.06
0.41
+0.03
–0.05
Marking: NQ
EQUIVALENT CURCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Source (S)
Internal
diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Voltage
VDSS
VGS = 0
Gate to Source Voltage
VGSS
VDS = 0
Drain Current (DC)
ID(DC)
Drain Current (Pulse)
Total Power Dissipation
ID(pulse)
PT
PW 10 ms, duty cycle 50 %
16 cm2 × 0.7 mm ceramic substrate used
Channel Temperature
Tch
Storage Temperature
Tstg
RATING
16
±7.0
±2.0
±4.0
2.0
150
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
Document No. D11222EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
©
1996
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