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BZW04-102 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
BZW04-102
Vishay
Vishay Semiconductors Vishay
BZW04-102 Datasheet PDF : 6 Pages
1 2 3 4 5 6
www.vishay.com
BZW04P-5V8 thru BZW04-376
Vishay General Semiconductor
TransZorb® Transient Voltage Suppressors
DO-204AL (DO-41)
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
VWM
PPPM
PD
IFSM (uni-directional only)
TJ max.
5.8 V to 376 V
400 W
1.5 W
40 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use B suffix (e.g.
BZW04P-6V4B).
Electrical characteristics apply in both directions.
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial and telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
BZW04-213(B) ~ BZW04-376(B) for commercial grade only
Polarity: For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25 °C unles otherwise noted)
PARAMETER
SYMBOL
LIMIT
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1)
PPPM
IPPM
400
See next
table
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2)
Maximum instantaneous forward voltage at 25 A for uni-directional only (3)
Operating junction and storage temperature range
PD
IFSM
VF
TJ, TSTG
1.5
40
3.5/5.0
- 55 to + 175
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) VF = 3.5 V for BZW04P(-)188 and below; VF = 5.0 V for BZW04P(-)213 and above
UNIT
W
A
W
A
V
°C
Revision: 12-Jul-11
1
Document Number: 88316
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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