NDD02N60Z-1G View Datasheet(PDF) - ON Semiconductor
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Description
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NDD02N60Z-1G Datasheet PDF : 10 Pages
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NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET
600 V, 4.8 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF NDD Unit
Drain−to−Source Voltage
Continuous Drain Current RqJC
(Note 1)
VDSS
ID
600
V
2.4
2.2
A
Continuous Drain Current RqJC
TA = 100°C (Note 1)
Pulsed Drain Current, VGS @ 10 V
Power Dissipation RqJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
ID = 2.4 A
ESD (HBM)
(JESD 22−A114)
ID
IDM
PD
VGS
EAS
Vesd
1.6
1.4
A
10
9
A
24
57
W
±30
V
120
mJ
2500
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 17)
Peak Diode Recovery (Note 2)
VISO
4500
dv/dt
4.5
V
V/ns
Continuous Source Current (Body
IS
Diode)
2.4
A
Maximum Temperature for Soldering
TL
Leads
260
°C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. ISD = 2.4 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
www.onsemi.com
VDSS
600 V
RDS(on) (MAX) @ 1 A
4.8 W
N−Channel
D (2)
G (1)
S (3)
1
2
3
NDF02N60ZG,
NDF02N60ZH
TO−220FP
CASE 221AH
4
1
2
3
NDD02N60Z−1G
IPAK
CASE 369D
4
12
3
NDD02N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
January, 2014 − Rev. 8
Publication Order Number:
NDF02N60Z/D
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