20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
FAX: (973) 376-8960
BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
• Designed for Complementary Use with
BDV64, BDV64A, BDV64B and BDV64C
• 125 W at 25°C Case Temperature
• 12 A Continuous Collector Current
• Minimum hFE of 1000 at 4 V, 5 A
* o y~~
Pin 2 is in electrical contact with the mounting base
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
Collector-emitter voltage (Ig = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES; 1. This value applies for Ip < 0.1 ms. duty cycle < 10%
2. Derate linearly to 150"C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
-65 to +150
-65 to +1 50
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conducton is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.