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STU13N60M2 View Datasheet(PDF) - STMicroelectronics

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Description
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STU13N60M2 Datasheet PDF : 18 Pages
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STP13N60M2, STU13N60M2, STW13N60M2
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VGS
ID
ID
(1)
IDM
PTOT
(2)
dv/dt
(3)
dv/dt
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Tstg Storage temperature
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD 11 A, di/dt 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V.
3. VDS 480 V
± 25
11
7
44
110
15
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TO-220
62.5
Value
IPAK
1.14
100
Unit
TO-247
°C/W
50 °C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not
IAR
repetitive (pulse width limited by Tjmax )
Single pulse avalanche energy (starting
EAS
Tj=25°C, ID= IAR; VDD=50)
2.8
A
125
mJ
DocID023937 Rev 5
3/18
 

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