DSEP15-06A View Datasheet(PDF) - IXYS CORPORATION

Part Name

Description

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DSEP15-06A

Low Loss and Soft Recovery High Performance Fast Recovery Diode Single Diode

IXYS CORPORATION 

DSEP15-06A

Fast Diode

40

30

IF

20

[A]

10

TVJ = 150°C

100°C

25°C

2000

TVJ = 100°C

VR = 300 V

1500

Qr

1000

[μC]

500

IF = 30A

15 A

7.5 A

40

TVJ = 100°C

VR = 300 V

30

IRM

20

[A]

IF = 30A

15 A

7.5 A

10

0

0

1

2

VF [V]

Fig. 1 Forward current

IF versus VF

2.0

1.5

Kf 1.0

0.5

IRM

Qr

0

100

1000

-diF /dt [A/μs]

Fig. 2 Typ. reverse recov. charge

Qr versus -diF /dt

0

0 200 400 600 800 1000

-diF /dt [A/μs]

Fig. 3 Typ. peak reverse current

IRM versus -diF/dt

120

20

1.6

TVJ = 100°C

VR = 300 V

TVJ = 100°C

V IF = 15 A

110

15

1.2

trr 100

[ns] 90

80

IF = 30A

15 A

7.5 A

VFR

10

[V]

5

VFR

trr

0.8

[μs]

0.4

trr

0.0

0

40

80 120 160

TVJ [°C]

Fig. 4 Dynamic parameters

Qr, IRM versus TVJ

70

0 200 400 600 800

-diF /dt [A/μs]

Fig. 5 Typ. recovery time

trr versus -diF /dt

1000

0

0.0

0 200 400 600 800 1000

-diF /dt [A/μs]

Fig. 6 Typ. peak forward voltage

VFR and tfr versus diF /dt

10

1

ZthJC

0.1

[K/W]

0.01

Constants for ZthJC calculation:

i Rthi (K/W)

ti (s)

1 0.908 0.0052

2 0.350 0.0003

3 0.342 0.017

0.001

0.00001

0.0001

0.001

0.01

0.1

1

t [s]

Fig. 7 Transient thermal impedance junction to case

IXYS reserves the right to change limits, conditions and dimensions.

© 2012 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20120318a

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