DSEP15-06A View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
View to exact match
DSEP15-06A
IXYS CORPORATION
| DSEP15-06A Datasheet PDF : 0 Pages | |||
DSEP15-06A
Fast Diode
Symbol
VRSM
VRRM
IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
average forward current
VR = 600 V
VR = 600 V
IF = 15 A
IF = 30 A
IF = 15 A
IF = 30 A
TC = 140°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
CJ
I RM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 400 V f = 1 MHz
t rr
reverse recovery time
IF = 15 A; VR = 300 V
-diF/dt = 200 A/µs
EAS
non-repetitive avalanche energy
IAS = 1 A L = 180 µH
IAR
repetitive avalanche current
VA = 1.5·VR typ.: f = 10 kHz
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
TVJ = 175°C
Ratings
min. typ. max. Unit
600 V
600 V
100 µA
0.5 mA
2.04 V
2.25 V
1.35 V
1.59 V
15 A
TVJ = 175°C
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 25 °C
TVJ = 100 °C
TVJ = 25 °C
TVJ = 100 °C
TVJ = 25°C
0.50
12
5
7
35
95
0.99 V
15 mΩ
1.6 K/W
K/W
95 W
110 A
pF
A
A
ns
ns
0.1 mJ
0.1 A
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120318a
|
|
Share Link: