STP13N80K5 View Datasheet(PDF) - STMicroelectronics
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Description
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STP13N80K5
STMicroelectronics
STP13N80K5 Datasheet PDF : 23 Pages
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STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
Table 7: Switching times
Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
VDD= 400 V, ID = 6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21: "Test circuit
for resistive load switching
times" and Figure 26:
"Switching time waveform")
-
16
-
ns
-
16
-
ns
-
42
-
ns
-
16
-
ns
Symbol Parameter
Table 8: Source-drain diode
Test conditions
ISD Source-drain current
ISDM(1)
Source-drain current
(pulsed)
VSD(2) Forward on voltage
ISD = 12 A, VGS = 0 V
trr
Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 12 A, di/dt = 100 A/μs,
VDD = 60 V
(see Figure 23: "Test circuit
for inductive load switching
and diode recovery times")
trr
Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 12 A, di/dt = 100 A/μs,
VDD= 60 V, Tj= 150 °C
(see Figure 23: "Test circuit
for inductive load switching
and diode recovery times")
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Min. Typ. Max. Unit
-
14 A
-
56 A
-
1.5 V
- 406
ns
- 5.7
μC
- 28
A
- 600
ns
- 7.9
μC
- 26
A
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS= ±1 mA, ID= 0 A
Min. Typ. Max. Unit
±30 -
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID024348 Rev 4
5/23
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