KRC286M View Datasheet(PDF) - KEC
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Description
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| KRC286M Datasheet PDF : 0 Pages | |||
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : VEBO=25V(Min)
High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on resistance : Ron=1 (Typ.) (IB=5mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
C
R1
B
KRC281M~KRC286M
EPITAXIAL PLANAR NPN TRANSISTOR
B
H
M
C
EE
1 2 3N
L
1. EMITTER
2. COLLECTOR
3. BASE
O DIM MILLIMETERS
A 3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40+_ 0.15
E
1.27
F
2.30
G 14.00+_ 0.50
H 0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N 0.55 MAX
O
0.75
E
TO-92M
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
50
20
25
300
400
150
-55 150
UNIT
V
V
V
mA
W
2002. 12. 5
Revision No : 1
1/2
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