KRA730E View Datasheet(PDF) - KEC
Part Name
Description
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KRA730E Datasheet PDF : 4 Pages
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SEMICONDUCTOR
TECHNICAL DATA
KRA730E~KRA734E
EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
C
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
A1
1.0 +_ 0.05
2
5
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
J
0.12+_ 0.05
P
P
P
5
R1
B
E
Q1
Q2
1
2
3
1. Q1 EMITTER
2. Q2 EMITTER
3. Q2 BASE
4. Q2 COLLECTOR
5. Q1 BASE
6. Q1 COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
Collector Current
IC
RATING
-50
-50
-5
-100
UNIT
CHARACTERISTIC
V
Collector Power Dissipation
V
Junction Temperature
V
Storage TemperatureRange
mA * Total Rating.
TES6
SYMBOL
PC *
Tj
Tstg
RATING
200
150
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRA730E
KRA731E
Input Resistor
KRA732E
KRA733E
KRA734E
Note : * Characteristic of transistor only.
ICBO
IEBO
hFE
VCE(sat)
fT *
R1
TEST CONDITION
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-1mA
IC=-10mA, IB=-0.5mA
VCE=-10V, IC=-5mA
MARK SPEC
TYPE
KRA730E
MARK
JK
KRA731E
JM
KRA732E
JN
KRA733E
JO
KRA734E
JP
MIN.
-
-
120
-
-
-
-
-
-
-
TYP.
-
-
-
-0.1
250
4.7
10
100
22
47
MAX.
-100
-100
-
-0.3
-
-
-
-
-
-
Marking
Type Name
654
UNIT
nA
nA
V
MHz
k
1 23
2002. 7. 9
Revision No : 2
1/4
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