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KRA562E View Datasheet(PDF) - KEC

Part Name
Description
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KRA562E Datasheet PDF : 4 Pages
1 2 3 4
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
C
R1
B
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q1
Q2
E
1
2
3
KRA560E~KRA564E
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
1
5
DIM MILLIMETERS
A
1.6 +_ 0.05
A1
1.0+_ 0.05
2
B
1.6+_ 0.05
B1
1.2+_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
P
J
0.12+_ 0.05
P
5
1. Q1 IN (BASE)
2. Q1, Q 2 COMMON (EMITTER)
3. Q2 IN (BASE)
4. Q2 OUT (COLLECTOR)
5. Q1 OUT (COLLECTOR)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
Collector Current
IC
RATING
-50
-50
-5
-100
UNIT
V
V
V
mA
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage TemperatureRange
* Total Rating.
TESV
SYMBOL
PC *
Tj
Tstg
RATING
200
150
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
KRA560E
KRA561E
Input Resistor
KRA562E
KRA563E
KRA564E
Note : * Characteristic of Transistor Only.
ICBO
IEBO
hFE
VCE(sat)
fT *
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-1mA
IC=-10mA, IB=-0.5mA
VCE=-10V, IC=-5mA
R1
MARK SPEC
TYPE
KRA560E
KRA561E
KRA562E
KRA563E
KRA564E
-
-
120
-
-
-
-
-
-
-
Marking
5
MARK
PK
PM
PN
PO
PP
TYP.
-
-
-
-0.1
250
4.7
10
100
22
47
MAX.
-100
-100
-
-0.3
-
-
-
-
-
-
UNIT
nA
nA
V
MHz
k
Type Name
4
1 23
2002. 7. 9
Revision No : 2
1/4
 

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