FQP27P06 View Datasheet(PDF) - Fairchild Semiconductor
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FQP27P06 Datasheet PDF : 10 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = -250 μ A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R DS(on)
102
100 s
1 ms
10 ms
101
DC
100
※ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
10-1
100
101
102
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = -10 V
2. ID = -13.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
30
25
20
15
10
5
0
25
50
75
100
125
150
175
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0.5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0.0 1
sin g le p u lse
※ N o te s :
1 . Z θ JC(t) = 1 .2 5 ℃ /W M a x .
2 . D uty F a cto r, D = t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
4
FQP27P06 Rev.C0
www.fairchildsemi.com
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