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FQP27P06 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQP27P06
Fairchild
Fairchild Semiconductor Fairchild
FQP27P06 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Elerical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 A
-60
--
--
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = -250 A, Referenced to 25°C -- -0.06
--
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
VDS = -48 V, TC = 150°C
--
--
-1
--
--
-10
IGSSF
Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V
--
--
-100
IGSSR
Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V
--
--
100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = -250 A
VGS = -10 V, ID = -13.5 A
-2.0 --
-4.0
-- 0.055 0.07
gFS
Forward Transconductance
Dynamic Characteristics
VDS = -30 V, ID = -13.5 A
-- 12.4
--
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 1100 1400
-- 510 660
-- 120 155
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -30 V, ID = -13.5 A,
RG = 25
--
18
45
-- 185 380
--
30
70
(Note 4)
--
90 190
VDS = -48 V, ID = -27 A,
--
33
43
VGS = -10 V
--
6.8
--
(Note 4)
--
18
--
Unit
V
V/°C
A
A
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -27 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -27 A,
dIF / dt = 100 A/s
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Starting TJ = 25°C
3. ISD -27A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
--
--
-27
A
--
--
-108
A
--
--
-4.0
V
-- 105
--
ns
-- 0.41
--
C
©2001 Fairchild Semiconductor Corporation
2
FQP27P06 Rev.C0
www.fairchildsemi.com
 

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