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FQP27P06 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQP27P06
Fairchild
Fairchild Semiconductor Fairchild
FQP27P06 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
March 2013
FQP27P06
P-Channel QFET® MOSFET
- 60 V, - 27 A, 70 m
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• - 27 A, - 60 V, RDS(on) = 70 m(Max.) @ VGS = - 10 V,
ID = - 13.5 A
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating
S
G
D
S
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G
▶▲
D
FQP27P06
-60
-27
-19.1
-108
25
560
-27
12
-7.0
120
0.8
-55 to +175
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQP27P06
1.25
0.5
62.5
Unit
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
1
FQP27P06 Rev.C0
www.fairchildsemi.com
 

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