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FQA46N15_14 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
FQA46N15_14
Fairchild
Fairchild Semiconductor Fairchild
FQA46N15_14 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Package Marking and Ordering Information
Part Number
FQA46N15
Top Mark
FQA46N15
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
150
BVDSS/
TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 150 V, VGS = 0 V
--
VDS = 120 V, TC = 150°C
--
IGSSF
Gate-Body Leakage Current, Forward
VGS = 25 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -25 V, VDS = 0 V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 25A
--
gFS
Forward Transconductance
VDS = 40 V, ID = 25A
--
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 75 V, ID = 45.6A,
--
RG = 25
--
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
--
(Note 4)
--
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 120 V, ID = 45.6A,
--
VGS = 10 V
--
(Note 4)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS =50A
--
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 45.6 A,
--
dIF / dt = 100 A/µs
--
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.43 mH, IAS = 50 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3.ISD 46.6 A, di/dt 300 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Typ. Max. Unit
--
--
V
0.16
--
V/°C
--
1
µA
--
10
µA
--
100
nA
--
-100 nA
--
4.0
V
0.033 0.042
36
--
S
2500 3250 pF
520 670
pF
100 130
pF
35
80
ns
320 650
ns
210 430
ns
200 410
ns
85
110
nC
15
--
nC
41
--
nC
--
50
A
--
200
A
--
1.5
V
130
--
ns
0.55
--
µC
©2009 Fairchild Semiconductor Corporation
2
FQA46N15 Rev C2
www.fairchildsemi.com
 

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