BAS86 View Datasheet(PDF) - NXP Semiconductors.
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Description
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BAS86 Datasheet PDF : 9 Pages
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NXP Semiconductors
BAS86
Schottky barrier single diode
103
IF
(mA)
102
(1) (2) (3)
mld357
10
(1) (2) (3)
1
10- 1
0
0.4
0.8
1.2
VF (V)
Fig. 1.
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Forward current as a function of forward
voltage; typical values
mgc687
12
Cd
(pF)
8
4
0
0
10
20
30
Tamb = 25 °C; f = 1 MHz
40
50
VR (V)
Fig. 3. Diode capacitance as a function of reverse
voltage; typical values
105
IR
(nA)
104
103
102
mgc686
(1)
(2)
10
(3)
1
10- 1
0
10
20
30
40
50
VR (V)
(1) Tamb = 85 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig. 2. Reverse current as a function of reverse
voltage; typical values
250
IF(AV)
(mA)
200
mra540
150
100
50
0
0
50
100
150
Tamb (°C)
FR4 PCB, standard footprint
Fig. 4. Average forward current as a function of
ambient temperature; derating curve
8. Test information
BAS86
Product data sheet
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25 July 2012
© NXP B.V. 2012. All rights reserved
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