BAS85-M-18_13 View Datasheet(PDF) -
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BAS86-M
Vishay Semiconductors
500
450 VR = 50 V
400
350
300
250
PR - Limit
200
at 100 % VR
150
100 RthJA = 540 K/W
50
PR - Limit
at 80 % VR
0
25
50
75 100 125 150
15827
Tj - Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
0.1
15830
f = 1 MHz
1
10
100
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
10000
1000
VR = V RRM
100
10
1
25
15828
50
75 100 125 150
Tj - Junction Temperature (°C)
Fig. 2 - Reverse Current vs. Junction Temperature
1000
100
10
Tj = 125 °C
Tj = 25 °C
1
0.1
0
15829
0.5
1.0
1.5
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Rev. 1.1, 21-Jan-13
2
Document Number: 83402
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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