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NSB8AT View Datasheet(PDF) - General Semiconductor

Part Name
Description
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NSB8AT Datasheet PDF : 2 Pages
1 2
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
NSB8AT THRU NSB8MT
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Amperes
0.320 (8.13)
0.360 (9.14)
TO-263AA
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High forward current capability
High surge current capability
Low forward voltage drop
Glass passivated chip junction
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
SEATING -T-
PLATE
0.095 (2.41)
0.100 (2.54)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
MECHANICAL DATA
Case: JEDEC TO-263AA molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
Maximum repetitive peak reverse voltage
VRRM
Maximum RMS voltage
VRMS
Maximum DC blocking voltage
VDC
Maximum average forward rectified current at TC=100°C I(AV)
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 8.0A
VF
Maximum DC reverse current
at rated DC blocking voltage
TC=25°C
IR
TC=100°C
Typical junction capacitance (NOTE 1)
CJ
Typical thermal resistance (NOTE 2)
RΘJC
Operating junction and storage temperature range
TJ, TSTG
NSB8
AT
50
35
50
NSB8
BT
100
70
100
NSB8
DT
200
140
200
NSB8
GT
400
280
400
8.0
NSB8
JT
600
420
600
175.0
1.1
10.0
100.0
55.0
3.0
-55 to +150
NSB8
KT
800
560
800
NSB8
MT
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
µA
pF
°C/W
°C
NOTES:
(1) Measured at 1.0 MHz and applied reversed voltage of 4.0 Volts
(2) Thermal resistance from junction to case mounted on heatsink
4/98
 

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