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BY299 View Datasheet(PDF) - Diode Semiconductor Korea

Part Name
Description
View to exact match
BY299
DSK
Diode Semiconductor Korea DSK
BY299 Datasheet PDF : 2 Pages
1 2
Diode Semiconductor Korea BY296(Z)---BY299S(Z)
FAST RECOVERY RECTIFIERS
VOLTAGE RANGE: 100--- 1000 V
CURRENT: 2.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:0.041 ounces,1.15 grams
Mounting position: Any
DO - 27
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BY
296
Maximum recurrent peak reverse voltage VRRM
100
Maximum RMS voltage
VRMS
70
Maximum DC blocking voltage
VDC
100
Maximum average forw ard rectified current
IF(AV)
9.5mm lead length,
@TA=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 2.0 A
IFSM
VF
Maximum reverse current
@TA=25
IR
at rated DC blocking voltage @TA=100
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance (Note2)
CJ
Typical thermal resistance
(Note3)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE:1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
BY
297
BY
298
BY
BY
UNITS
299
299S
200
400
800
1000
V
140
280
560
700
V
200
400
800
1000
V
2.0
A
70.0
1.3
10.0
100.0
150
32
22
- 55---- +150
- 55---- +150
A
V
A
ns
pF
/W
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