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BCX52-10 View Datasheet(PDF) - Philips Electronics

Part NameDescriptionManufacturer
BCX52-10 PNP medium power transistors Philips
Philips Electronics Philips
BCX52-10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
PNP medium power transistors
Product specification
BCX51; BCX52; BCX53
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBE
fT
collector cut-off current
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 125 °C
emitter cut-off current
IC = 0; VEB = 5 V
DC current gain
VCE = 2 V; see Fig.2
IC = 5 mA
40
IC = 150 mA
63
IC = 500 mA
25
DC current gain
IC = 150 mA; VCE = 2 V; see Fig.2
BCX51-10; BCX52-10; BCX53-10
63
BCX51-16; BCX52-16; BCX53-16
100
collector-emitter saturation voltage IC = 500 mA; IB = 50 mA
base-emitter voltage
IC = 500 mA; VCE = 2 V
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
50
100 nA
10 µA
100 nA
250
160
250
500
1
mV
V
MHz
160
handbook, full pagewidth
hFE
120
80
40
0
101
VCE = 2 V
MBH730
1
10
102
Fig.2 DC current gain; typical values.
103
IC (mA)
104
1999 Apr 19
4
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