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BCX52-10 View Datasheet(PDF) - Philips Electronics

Part NameBCX52-10 Philips
Philips Electronics Philips
DescriptionPNP medium power transistors


BCX52-10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
PNP medium power transistors
Product specification
BCX51; BCX52; BCX53
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BCX51
BCX52
BCX53
VCEO
collector-emitter voltage
BCX51
BCX52
BCX53
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
MIN.
MAX.
UNIT
45
V
60
V
100
V
45
V
60
V
80
V
5
V
1
A
1.5
A
200
mA
1.3
W
65
+150
°C
150
°C
65
+150
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point note 1
94
K/W
14
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 19
3
Direct download click here

DESCRIPTION
PNP medium power transistor in a SOT89 plastic package. NPN complements: BCX54, BCX55 and BCX56.

FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).

APPLICATIONS
• Medium power general purposes
• Driver stages of audio amplifiers.

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