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BCX5316TC View Datasheet(PDF) - Diodes Incorporated.

Part NameDescriptionManufacturer
BCX5316TC PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Diodes
Diodes Incorporated. Diodes
BCX5316TC Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BCX 51 / 52 / 53
Electrical Characteristics @ TA = 25°C unless otherwise specified
Collector-Base
Breakdown Voltage
Characteristic
Collector-Emitter
Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
BCX51
BCX52
BCX53
BCX51
BCX52
BCX53
Symbol
BVCBO
BVCEO
BVEBO
Min
-45
-60
-100
-45
-60
-80
-5
Collector Cut-off Current
ICBO
-
Emitter Cut-off Current
IEBO
-
25
All versions
40
Static Forward Current Transfer Ratio (Note 6)
hFE
25
10 gain grp
63
16 gain grp
100
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
VCE(sat)
-
VBE(on)
-
Transition Frequency
fT
150
Output Capacitance
Cobo
-
Notes: 6. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
Typ
Max
Unit
Test Condition
-
-
V IC = -100µA
-
-
V IC = -10mA
-
-
V IE = -10µA
-
-0.1
-20
µA VCB = -30V
VCB = -30V, TA = 150°C
-
-20
nA VEB = -4V
-
-
-
250
-
-
IC = -5mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -500mA, VCE = -2V
-
160
IC = -150mA, VCE = -2V
-
250
IC = -150mA, VCE = -2V
-
-0.5
V IC = -500mA, IB = -50mA
-
-1.0
V IC = -500mA, VCE = -2V
-
-
MHz
IC = -50mA, VCE = -10V
f = 100MHz
-
25
pF VCB = -10V, f = 1MHz
1.0
IB = 10mA
0.8
IB = 8mA
IB = 6mA
0.6
IB = 4mA
0.4
IB = 2mA
0.2
0
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
500
400
300
TA = 150°C
TA = 85°C
200 TA = 25°C
VCE = -5V
100
TA = -55°C
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
4 of 7
www.diodes.com
June 2011
© Diodes Incorporated
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