BCX52-10 View Datasheet(PDF) - NXP Semiconductors.
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Description
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BCX52-10 Datasheet PDF : 0 Pages
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NXP Semiconductors
BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
1
0
0.01
006aac687
10–1
10–5
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = 30 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
-
-
100 nA
-
-
10 A
-
-
100 nA
hFE
DC current gain
VCE = 2 V
IC = 5 mA
IC = 150 mA
IC = 500 mA
DC current gain
VCE = 2 V
hFE selection -10
IC = 150 mA
63 -
-
63 -
250
[1] 40
-
-
63 -
160
VCEsat
VBE
Cc
hFE selection -16
IC = 150 mA
100 -
collector-emitter
saturation voltage
IC = 500 mA;
IB = 50 mA
[1] -
-
base-emitter voltage VCE = 2 V; IC = 500 mA [1] -
-
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
15
f = 1 MHz
250
0.5 V
1 V
-
pF
fT
transition frequency VCE = 5 V; IC = 50 mA;
-
145 -
MHz
f = 100 MHz
[1] Pulse test: tp 300 s; = 0.02.
BCP52_BCX52_BC52PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 18 October 2011
© NXP B.V. 2011. All rights reserved.
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