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BCP52-10(2008) View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
View to exact match
BCP52-10
(Rev.:2008)
NXP
NXP Semiconductors. NXP
BCP52-10 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
BCP52; BCX52
60 V, 1 A PNP medium power transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
collector-base voltage
open emitter
-
collector-emitter voltage
open base
-
emitter-base voltage
open collector
-
collector current
-
peak collector current
single pulse;
-
tp 1 ms
peak base current
single pulse;
-
tp 1 ms
total power dissipation
Tamb 25 °C
BCP52
[1] -
[2] -
BCX52
[1] -
[2] -
[3] -
Tj
junction temperature
-
Tamb
ambient temperature
65
Tstg
storage temperature
65
Max Unit
60
V
60
V
5
V
1
A
1.5 A
0.2 A
0.65 W
1
W
0.5
W
0.9
W
1.3
W
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
BCP52_BCX52_8
Product data sheet
Rev. 08 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
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