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BCX53-16 View Datasheet(PDF) - Bruckewell Technology LTD

Part Name
Description
View to exact match
BCX53-16
BWTECH
Bruckewell Technology LTD BWTECH
BCX53-16 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BCX51-BCX53
PNP Silicon AF Transistors
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol Parameter
BCX51
BCX52
BCX53
Unit
VCEO
Collector-Emitter Voltage
45
60
80
V
VCBO
Collector-Base Voltage
45
60
100
V
VEBO
Emitter-Base Voltage
5
5
5
V
IC
Collector CurrentContinuous
1
A
ICM
Peak collector current, tp ≤ 10
1.5
A
IB
Base current
100
mA
IBM
Peak base current
200
mA
Ptot
Total power dissipation, TS ≤ 120 °C
2
W
TJ
Junction temperature
Tstg
Storage temperature
150
°C
-65~+150
°C
THERMAL CHARACTERISTICS
Symbol
Characteristic
RthJS
Junction - soldering point
Max
Unit
≤ 15
K/W
DC CHARACTERISTICS
Symbol
Parameter
Collector-Emitter Breakdown V oltage
V(BR)CEO
(Ic=-10mAdc,IB=0)
Collector-Base Breakdown Voltage
V(BR)CBO
(Ic=-10μAdc,IE=0)
Emitter-Base Breakdown Voltage
V(BR)EBO
(IE=-10μAdc,Ic=0)
ICBO
Collector Cutoff Current V
(VCB=-30v)
(VcB=-30Vdc,TA=150°C)
DC Current Gain
HFE
(IC = 5 mA, VCE = 2 V)
(IC = 150 mA, VCE = 2 V)
BCX51
BCX52
MIN
TYP
MAX UNIT
45
V
60
V
BCX53
80
V
BCX51
45
V
BCX52
60
V
BCX53
100
V
BCX51
5
V
BCX52
5
V
BCX53
5
V
V
0.1
uA
20
uA
BCX51
25
BCX52
25
BCX53
25
BCX51-53
40
250
hFE-grp.10
63
100
160
hFE-grp.16
100
160
250
Publication Order Number: [BCX51-BCX53]
© Bruckewell Technology Corporation Rev. A -2014
 

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