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BCX52 View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
BCX52 PNP Silicon AF Transistors Infineon
Infineon Technologies Infineon
BCX52 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BCX51...-BCX53...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCX51
IC = 10 mA, IB = 0 , BCX52
IC = 10 mA, IB = 0 , BCX53
V(BR)CEO
45
-
60
-
80
-
V
-
-
-
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCX51
IC = 100 µA, IE = 0 , BCX52
IC = 100 µA, IE = 0 , BCX53
V(BR)CBO
45
-
-
60
-
-
100 -
-
Emitter-base breakdown voltage
V(BR)EBO 5
-
-
IE = 10 µA, IC = 0
Collector-base cutoff current
ICBO
µA
VCB = 30 V, IE = 0
-
-
0.1
VCB = 30 V, IE = 0 , TA = 150 °C
-
-
20
DC current gain1)
hFE
-
IC = 5 mA, VCE = 2 V
25
-
-
IC = 150 mA, VCE = 2 V, BCX51...BCX53
40
- 250
IC = 150 mA, VCE = 2 V, BCX53-10
63 100 160
IC = 150 mA, VCE = 2 V, BCX51-16...BCX53-16
100 160 250
IC = 500 mA, VCE = 2 V
25
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
Base-emitter voltage1)
IC = 500 mA, VCE = 2 V
VCEsat
-
VBE(ON)
-
-
0.5 V
-
1
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 20 MHz
fT
- 125 - MHz
1Pulse test: t < 300µs; D < 2%
3
2011-07-29
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