datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BAL74 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
View to exact match
BAL74
NXP
NXP Semiconductors. NXP
BAL74 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Philips Semiconductors
High-speed diode
Product specification
BAL74
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VRRM
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
see Fig.2; note 1
square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 µs
tp = 1 ms
tp = 1 s
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
50 V
50 V
215 mA
500 mA
4
A
1
A
0.5 A
250 mW
65 +150 °C
150 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
MAX. UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
715 mV
855 mV
1
V
1.25 V
VR = 50 V
0.1 µA
VR = 50 V; Tj = 150 °C
100 µA
f = 1 MHz; VR = 0; see Fig.6
2
pF
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 ; measured at IR = 1 mA; see Fig.7
4
ns
when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-tp)
Rth(j-a)
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
330
500
UNIT
K/W
K/W
2003 Dec 17
3
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]