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MMBD2835LT1 View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
MMBD2835LT1
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMBD2835LT1 Datasheet PDF : 4 Pages
1 2 3 4
ON Semiconductort
Monolithic Dual Switching
Diodes
MMBD2835LT1
MMBD2836LT1
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
MMBD2835LT1
MMBD2836LT1
Forward Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VR
IF
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Value
35
75
100
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
3
1
2
CASE 318–08, STYLE 12
SOT–23 (TO–236AB)
ANODE
3
CATHODE
1
2
CATHODE
DEVICE MARKING
MMBD2835LT1 = A3X; MMBD2836LT1 = A2X
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR = 100 µAdc)
MMBD2835LT1
V(BR)
35
MMBD2836LT1
75
Reverse Voltage Leakage Current (Note 3)
(VR = 30 Vdc)
(VR = 50 Vdc)
IR
MMBD2835LT1
MMBD2836LT1
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
CT
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 100 mAdc)
VF
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
trr
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. For each individual diode while the second diode is unbiased.
Max
Unit
Vdc
nAdc
100
100
4.0
pF
1.0
Vdc
1.0
1.2
4.0
ns
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 3
Publication Order Number:
MMBD2835LT1/D
 

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