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P-TO251-3-1 查看數據表(PDF) - Infineon Technologies

零件编号产品描述 (功能)生产厂家
P-TO251-3-1 Infineon
Infineon Technologies Infineon
P-TO251-3-1 Datasheet PDF : 0 Pages
IPD20N03L
IPU20N03L
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 15 A, VDD = 25 V, RGS = 25
16
mJ
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
36 IPD20N03L
V
12
10
8
6
4
2
0
25 45 65 85 105 125 145 °C 185
Tj
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 15 A pulsed
IPD20N03L
16
V
34
33
32
31
30
29
28
27
-60 -20 20 60 100 140 °C 200
Tj
12
10
0.2 VDS max
8 0.5 VDS max
0.8 VDS max
6
4
2
0
0 2 4 6 8 10 12 14 16 18 nC 21
QGate
Page 7
2003-01-17
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