NXP Semiconductors
PNP general purpose transistor
Product data sheet
2PB1219A
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V)
• Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT323; SC70 plastic package.
NPN complement: 2PD1820A.
MARKING
TYPE NUMBER
2PB1219AQ
2PB1219AR
2PB1219AS
MARKING CODE(1)
D∗Q
D∗R
D∗S
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM048
Fig.1 Simplified outline (SOT323; SC70)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Refer to SOT323; SC70 standard mounting conditions.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−60
−50
−5
−500
−1
−200
200
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
1999 Apr 12
2