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2PB1219A View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
2PB1219A
Philips
Philips Electronics Philips
2PB1219A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
PNP general purpose transistor
Product specification
2PB1219A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOT323; SC70 standard mounting conditions.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
2PB1219AQ
2PB1219AR
2PB1219AS
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
2PB1219AQ
2PB1219AR
2PB1219AS
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 150 mA; VCE = 10 V; note 1
IC = 500 mA; VCE = 10 V; note 1
IC = 300 mA; IB = 30 mA; note 1
IC = 300 mA; IB = 30 mA; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 50 mA; VCE = 10 V;
f = 100 MHz; note 1
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
MIN.
MAX.
100
5
100
UNIT
nA
µA
nA
85
170
120
240
170
340
40
600 mV
1.5 V
15
pF
100
120
140
MHz
MHz
MHz
1999 Apr 12
3
 

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