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PZTA28 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
PZTA28
Fairchild
Fairchild Semiconductor Fairchild
PZTA28 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MPSA28
MMBTA28
PZTA28
C
BE
TO-92
C
E
SuperSOT-3 B
Mark: 3SS
C
SOT-223
E
C
B
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 500 mA. Sourced
from Process 03.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
80
80
12
800
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA28
*MMBTA28
PD
Total Device Dissipation
Derate above 25°C
625
350
5.0
2.8
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA
Thermal Resistance, Junction to Ambient
200
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA28
1,000
8.0
125
Units
mW
mW /°C
°C/W
°C/W
2001 Fairchild Semiconductor International
MPSA28/MMBTA28/PZTA28, Rev A
 

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