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IRFP460PBF View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.

Part Name
Description
View to exact match
IRFP460PBF
THINKISEMI
Thinki Semiconductor Co., Ltd. THINKISEMI
IRFP460PBF Datasheet PDF : 6 Pages
1 2 3 4 5 6
IRFP460PBF
®
Typical Characteristics
V
Top : 15.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.0
0.8
VGS = 10V
0.6
0.4
V = 20V
GS
0.2
Note : TJ = 25
0.0
0
10
20
30
40
50
60
70
80
90
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
10000
8000
6000
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
2000
C
oss
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
150oC
25oC
100
10-1
2
-55oC
Notes :
1. V = 50V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
10
DS
V = 250V
DS
8
V = 400V
DS
6
4
2
Note : ID = 20.0 A
0
0
30
60
90
120
150
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 3/6
http://www.thinkisemi.com/
 

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