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IRFP460PBF View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.

Part NameDescriptionManufacturer
IRFP460PBF 20A, 500V Heatsink N-Channel Type Power MOSFET THINKISEMI
Thinki Semiconductor Co., Ltd. THINKISEMI
IRFP460PBF Datasheet PDF : 6 Pages
1 2 3 4 5 6
IRFP460PBF
®
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
500 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.55
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
V
VGS = 10 V, ID = 10.0 A
-- 0.2 0.24
VDS = 50 V, ID = 10.0 A (Note 4) --
18
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 4590 6000 pF
-- 380 460
pF
--
60
80
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
50 120
ns
VDD = 250 V, ID = 20 A,
RG = 25
-- 150 310
ns
-- 380 770
ns
(Note 4, 5) --
180
370
ns
-- 130 170
nC
VDS = 400 V, ID = 20 A,
VGS = 10 V
(Note 4, 5)
--
--
20
45
--
--
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
20
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
80
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 20 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 20 A,
-- 480
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
--
7.7
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.1mH, IAS = 20A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 20A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/6
http://www.thinkisemi.com/
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