IRFP460PBF View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.

Part Name

Description

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IRFP460PBF

20A, 500V Heatsink N-Channel Type Power MOSFET

Thinki Semiconductor Co., Ltd. 

IRFP460PBF

®

IRFP460PBF

Pb

Pb Free Plating Product

20A,500V Heatsink N-Channel Type Power MOSFET

Features

■ RDS(on) (Max 0.24 Ω )@VGS=10V

■ Gate Charge (Typical 130nC)

■ Improved dv/dt Capability

■ High ruggedness

■ 100% Avalanche Tested

1. Gate {

{ 2. Drain

●

◀▲

●

●

{ 3. Source

BVDSS = 500V

RDS(ON) = 0.24 ohm

ID = 20A

General Description

This N-channel enhancement mode field-effect power transistor

using THINKI Semiconductor advanced planar stripe, DMOS technol-

ogy intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged

avalanche characteristics. The TO-3PB pkg is well suited for

adaptor power unit and small power inverter application.

TO-3PB

3

2

1

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed

(Note 1)

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Value

500

20

12.5

80

± 30

1050

20

23.5

4.5

235

1.88

-55 to +150

300

Typ

Max

--

0.53

0.24

--

--

40

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Units

°C/W

°C/W

°C/W

Rev.05

© 2006 Thinki Semiconductor Co., Ltd.

Page 1/6

http://www.thinkisemi.com/

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