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B1185 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Part Name
Description
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B1185
Jiangsu
Jiangsu Changjiang Electronics Technology Co., Ltd Jiangsu
B1185 Datasheet PDF : 2 Pages
1 2
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SB1185 TRANSISTOR (PNP)
FEATURES
z Low Collector Saturation Voltage
z Complement to Type 2SD1762
APPLICATIONS
z For Use in Low Frequency Power Amplifier Applications
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-3
2
63
150
-55~+150
Unit
V
V
V
A
W
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-50µA,IE=0
-60
V
V(BR)CEO IC=-1mA,IB=0
-50
V
V(BR)EBO IE=-50µA,IC=0
-5
V
ICBO
VCB=-40V,IE=0
-1
μA
IEBO
VEB=-4V,IC=0
-1
μA
hFE*
VCE=-3V, IC=-0.5A
60
320
VCE(sat)* IC=-2A,IB=-0.2A
-1
V
VBE
*
(sat)
IC=-2A,IB=-0.2A
-1.5
V
Cob
VCB=-10V,IE=0, f=1MHz
50
pF
fT
VCE=-5V,IC=-0.5A, f=30MHz
70
MHz
CLASSIFICATION OF hFE
RANK
RANGE
D
60-120
E
100-200
F
160-320
www.cj-elec.com
1
B,Nov,2014
 

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