IRFB9N60APBF View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

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IRFB9N60APBF

Power MOSFET

Vishay Semiconductors 

IRFB9N60A, SiHFB9N60A

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100

10

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.7V

100

TJ = 150° C

10

1

4.7V

0.1

0.1

20µs PULSE WIDTH

TJ= 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

TJ = 25 °C

1

0.1

4.0

V DS= 50V

20µs PULSE WIDTH

5.0 6.0 7.0 8.0 9.0 10.0

VGS , Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.7V

10

4.7V

20µs PULSE WIDTH

TJ= 150 °C

1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

3.0 ID = 9.2A

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91103

S11-0514-Rev. C, 21-Mar-11

www.vishay.com

3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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