P-TO220-3-1(2003) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
P-TO220-3-1 Datasheet PDF : 13 Pages
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Final data
SPP17N80C3, SPB17N80C3
SPA17N80C3
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
1.5
Ω
10 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 11 A, VGS = 10 V
SPP17N80C3
1.6
Ω
1.3
1.2
1.2
1.1 4V 4.5V 5V
5.5V 6V
6.5V
1
1
0.8
0.9
0.6
0.8
7V
8V
0.4
98%
0.7
10V
20V
typ
0.2
0.6
0.5
0
5 10 15 20 25 A
35
ID
0
-60 -20
20
60 100 °C
180
Tj
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
65
A
25°C
55
50
45
40
35
150°C
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 V 20
VGS
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 17 A pulsed
SPP17N80C3
16
V
12
0,2 VDS max
10
0,8 VDS max
8
6
4
2
0
0 20 40 60 80 100 120 nC 160
QGate
Page 7
2003-07-03
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