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P-TO220-3-1(2003) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
P-TO220-3-1
(Rev.:2003)
Infineon
Infineon Technologies Infineon
P-TO220-3-1 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Final data
SPP17N80C3, SPB17N80C3
SPA17N80C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 640 V, ID = 17 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s 4)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
Values
Unit
min. typ. max.
-
-
0.6 K/W
-
-
3.6
-
-
62
-
-
80
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 800
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=17A
- 870
breakdown voltage
-V
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
IDSS
ID=1000µA, VGS=VDS 2.1
VDS=800V, VGS=0V,
Tj=25°C
-
Tj=150°C
-
3
3.9
µA
0.5 25
- 250
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VGS=20V, VDS=0V
VGS=10V, ID=11A
Tj=25°C
Tj=150°C
-
- 100 nA
- 0.25 0.29
- 0.78 -
Gate input resistance
RG
f=1MHz, open drain
-
0.7
-
Page 2
2003-07-03
 

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