2SC3263O View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

View to exact match

2SC3263O

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3263

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

V(BR)CEO= 230V(Min)

·Good Linearity of hFE

·Complement to Type 2SA1294

APPLICATIONS

·Designed for audio and general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

230

V

VCEO

Collector-Emitter Voltage

230

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IBB

Base Current-Continuous

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

4

A

130

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

Share Link: