B1201U View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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B1201U

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB1201

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -1A; IB= -50mA

V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -10uA; IC= 0

ICBO

Collector Cutoff Current

VCB= -50V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

hFE1

DC Current Gain

IC= -0.1A; VCE= -2V

hFE2

DC Current Gain

IC= -1.5A; VCE= -2V

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1.0MHz

fT

Current-Gain—Bandwidth Product IC= -50mA; VCE= -10V

MIN TYP. MAX UNIT

-0.7 V

-1.2 V

-60

V

-50

V

-6

V

-100 nA

-100 nA

100

560

40

22

pF

150

MHz

 hFE1 Classifications

R

S

T

U

100-200 140-280 200-400 280-560

isc website：www.iscsemi.com

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