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B1201S View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
B1201S
Iscsemi
Inchange Semiconductor Iscsemi
B1201S Datasheet PDF : 0 Pages
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1201
DESCRIPTION
·Large current capacitance and wide ASO
·Small and slim package making it easy to make 2SB1201/2SD1801-used set smaller
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Voltage regulators,relay drivers,lamp drivers,
electrical equipment
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ
Junction Temperature
-4
A
15
W
0.8
W
150
Tstg
Storage Temperature Range
-55~150
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