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BAS85-GS08 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
BAS85-GS08
Vishay
Vishay Semiconductors Vishay
BAS85-GS08 Datasheet PDF : 4 Pages
1 2 3 4
BAS85
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Reverse breakdown voltage
IR = 10 µA (pulsed)
V(BR)
30
V
Leakage current
VR = 25 V
IR
0.2
2
µA
Pulse test tp < 300 µs,
IF = 0.1 mA
VF
240
mV
Pulse test tp < 300 µs, IF = 1 mA
VF
320
mV
Forward voltage
Pulse test tp < 300 µs,
IF = 10 mA
VF
400
mV
Pulse test tp < 300 µs,
IF = 30 mA
VF
500
mV
Pulse test tp < 300 µs,
IF = 100 mA
VF
800
mV
Diode capacitance
VR = 1 V, f = 1 MHz
CD
10
pF
Reverse recovery time
IF = 10 mA, IR = 10 mA,
Irr = 1 mA,
trr
5
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
200
180
VR = 30 V
160
140
RthJA = 540 kW
120
100
P - Limit
R
at 100 % VR
80
60
PR - Limit
at 80 % VR
40
20
0
25
50
75
100
125
150
15822
Tj - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
100
VR = VRRM
10
1
25
50
75
100
125
150
15823
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
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2
For technical questions within your region, please contact one of the following: Document Number 85510
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.9, 05-Aug-10
 

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