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BUZ171 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
BUZ171
Infineon
Infineon Technologies Infineon
BUZ171 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 171
Avalanche energy EAS = ƒ(Tj)
parameter: ID = -8 A, VDD = -25 V
RGS = 25 , L = 1.1 mH
75
mJ
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
-60
V
EAS 60
55
V(BR)DSS-57
-56
50
-55
45
-54
40
-53
35
-52
30
-51
25
-50
20
-49
15
-48
10
-47
5
0
20 40 60 80 100 120 °C 160
Tj
-46
-45
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
 

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