BUZ171 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

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BUZ171

SIPMOS® Power Transistor

Infineon Technologies 

BUZ 171

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = -5 A, VGS = -10 V

0.70

Ω

0.60

RDS (on)0.55

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

-60

-20

98%

typ

20

60

100 °C 160

Tj

Gate threshold voltage

VGS (th) = ƒ(Tj)

parameter: VGS = VDS, ID = 1 mA

-4.6

V

-4.0

VGS(th) -3.6

-3.2

98%

typ

-2.8

-2.4

2%

-2.0

-1.6

-1.2

-0.8

-0.4

0.0

-60

-20

20

60

100 °C 160

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS = 0V, f = 1MHz

10 4

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

-10 2

pF

C

10 3

A

I

F

-10 1

Ciss

10 2

Coss

Crss

10 1

0

-5 -10 -15 -20 -25 -30 V -40

VDS

Semiconductor Group

7

-10 0

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

-10 -1

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0

VSD

07/96

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