BUZ171 View Datasheet(PDF) - Siemens AG

Part Name

Description

View to exact match

BUZ171

SIPMOS® Power Transistor

Siemens AG 

BUZ 171

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

typ.

max.

Dynamic Characteristics

Transconductance

gfs

VDS≥ 2 * ID * RDS(on)max, ID = -5 A

1.5

Input capacitance

Ciss

VGS = 0 V, VDS = -25 V, f = 1 MHz

-

Output capacitance

Coss

VGS = 0 V, VDS = -25 V, f = 1 MHz

-

Reverse transfer capacitance

Crss

VGS = 0 V, VDS = -25 V, f = 1 MHz

-

Turn-on delay time

td(on)

VDD = -30 V, VGS = -10 V, ID = -2.9 A

RGS = 50 Ω

-

Rise time

tr

VDD = -30 V, VGS = -10 V, ID = -2.9 A

RGS = 50 Ω

-

Turn-off delay time

td(off)

VDD = -30 V, VGS = -10 V, ID = -2.9 A

RGS = 50 Ω

-

Fall time

tf

VDD = -30 V, VGS = -10 V, ID = -2.9 A

RGS = 50 Ω

-

2.3

-

750

1000

270

400

120

180

20

30

110

170

70

90

100

140

Unit

S

pF

ns

Semiconductor Group

3

07/96

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