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P-TO-263-3-2(2005) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
P-TO-263-3-2
(Rev.:2005)
Infineon
Infineon Technologies Infineon
P-TO-263-3-2 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
SGB15N60HS
^
*) Eon include losses
due to diode recovery
2,0mJ
1,0mJ
*) Eon include losses
due to diode recovery
Ets*
Ets*
1,0 mJ
Eon*
Eoff
0,5 mJ
Eon*
Eoff
0,0mJ
0A
10A
20A
30A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=23,
Dynamic test circuit in Figure E)
0,0 mJ
0Ω
10Ω
20Ω
30Ω
40Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
*) Eon include losses
due to diode recovery
0.75mJ
0.50mJ Ets*
0.25mJ
Eon*
Eoff
0.00mJ
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=20A, RG=23,
Dynamic test circuit in Figure E)
100K/W
D=0.5
0.2
10-1K/W 0.1
0.05
0.02
1 0 -2K /W
0.01
R,(1/W)
0.5321
0.2047
0.1304
0.0027
τ, (s)
0.04968
2.58*10-3
2.54*10-4
3.06*10-4
R1
R2
1 0 -3K /W
single pulse
C1=τ1/R1 C2=τ2/R2
1 0 -4K /W
1µs 10µs 100µs 1ms 10ms 100ms 1s
tP, PULSE WIDTH
Figure 16. IGBT transient thermal resistance
(D = tp / T)
Power Semiconductors
7
Rev 2.1 Jan 05
 

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