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P-TO-263-3-2(2005) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
P-TO-263-3-2
(Rev.:2005)
Infineon
Infineon Technologies Infineon
P-TO-263-3-2 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
SGB15N60HS
^
High Speed IGBT in NPT-technology
30% lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
High ruggedness, temperature stable behaviour
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
VCE
IC
Eoff
Tj
SGB15N60HS
600V 15A 200µJ 150°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature (reflow soldering, MSL1)
Marking
G15N60HS
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj ,Tstg
Tj(tl)
-
Package Ordering Code
P-TO-263-3-2 Q67040-S4535
Value
Unit
600
V
A
27
15
60
60
±20
V
±30
10
µs
138
W
-55...+150
°C
175
220
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev 2.1 Jan 05
 

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