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TIP115 View Datasheet(PDF) - Motorola => Freescale

Part NameDescriptionManufacturer
TIP115 DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60–80–100 VOLTS 50 WATTS Motorola
Motorola => Freescale Motorola
TIP115 Datasheet PDF : 6 Pages
1 2 3 4 5 6
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP110/D
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
High DC Current Gain —
hFE = 2500 (Typ) @ IC = 1.0 Adc
Collector–Emitter Sustaining Voltage — @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) — TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) — TIP112, TIP117
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Monolithic Construction with Built–in Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Peak
Symbol
VCEO
VCB
VEB
IC
TIP110,
TIP115
60
60
TIP111,
TIP116
80
80
5.0
2.0
4.0
TIP112,
TIP117
100
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
IB
50
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
PD
50
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
0.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C
PD
Derate above 25_C
2.0
0.016
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Unclamped Inductive Load Energy —
E
25
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Figure 13
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristics
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Ambient
– 65 to + 150
Symbol
Max
RθJC
2.5
RθJA
62.5
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
Watts
W/_C
mJ
_C
Unit
_C/W
_C/W
TA TC
NPN
TIP110
TIP111*
TIP112*
PNP
TIP115
TIP116*
TIP117*
*Motorola Preferred Device
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 – 80 – 100 VOLTS
50 WATTS
CASE 221A–06
TO–220AB
3.0 60
2.0 40
TC
1.0 20
TA
00
0 20 40 60 80 100 120
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
140 160
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
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