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TIP111 View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
TIP111 DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100 VOLTS, 50 WATTS ON-Semiconductor
ON Semiconductor ON-Semiconductor
TIP111 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
MAXIMUM RATINGS
Rating
TIP110, TIP111, TIP112,
Symbol
TIP115 TIP116 TIP117
Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
Collector Current Continuous
Peak
VCEO
VCB
VEB
IC
60
80
100
Vdc
60
80
100
Vdc
5.0
Vdc
2.0
Adc
4.0
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
IB
50
mAdc
PD
50
W
0.4
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
2.0
W
0.016
W/°C
Unclamped Inductive Load Energy Figure 13
Operating and Storage Junction
E
25
mJ
TJ, Tstg
65 to +150
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
2.5
°C/W
Thermal Resistance, JunctiontoAmbient
RqJA
62.5
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
Vdc
TIP110, TIP115
60
TIP111, TIP116
80
TIP112, TIP117
100
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP110, TIP115
TIP111, TIP116
TIP112 ,TIP117
ICEO
mAdc
2.0
2.0
2.0
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
ICBO
mAdc
1.0
1.0
1.0
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 2.0 Adc, VCE = 4.0 Vdc)
IEBO
2.0
mAdc
hFE
1000
500
CollectorEmitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc)
VCE(sat)
2.5
Vdc
BaseEmitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
hfe
25
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
TIP115, TIP116, TIP117
TIP110, TIP111, TIP112
pF
200
100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
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